Growth Rate and Thickness Uniformity of Epitaxial Graphene

The paper provides a deeper understanding of key-parameters of epitaxial graphene growth techniques on SiC. At 1600 degrees C, the graphene layer is continuous and covers a large area of the substrate. Significant differences in the growth rate could be observed for different reactor pressures and the polarity of SiC substrates as well as for the substrate miscut and surface quality. In addition, graphene thickness uniformity and mechanism of ridges creation was examined.