Atomic layer etching of HfO2 film for gate oxide in MOSFET devicesW. S. Lim,Y. Y. Kim,B. J. Park,G. Y. Yeommsra引用 23|浏览5暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要