Electronic-Properties Of Si Atomic-Planar-Doped Gaas/Alas Quantum-Well Structures Grown By Mbe

Optical and electrical properties of silicon atomic-planar-doped (Si-PD) (GaAs)m/(AlAs)5 rnultiquantura well structures (m = 3–13; 30 periods) were measured to study the energy band structure in ultrathin quantum well layers. Reduction of photoluminescence intensity for m = 3 suggests the conduction band crossover (direct-indirect transition) in the GaAs region.