A Study of (In,Ga,Al)As/GaAs Quantum-Dot Heterostructures by X-ray Diffraction and Total Reflection
Russian Microelectronics(2004)
摘要
The structure of (In,Ga,Al)As/GaAs stacks with one to three layers of self-assembled InAs quantum dots is studied by high-resolution x-ray diffractometry and x-ray reflectometry. It is shown that the quantum dots are almost pyramidal in shape. It is found that (i) a first InAs layer, 2.7 ML thick, is invariably produced with a faceted surface and (ii) vertical coupling of quantum dots and superlattice formation do occur (with three quantum-dot layers). It is demonstrated that combining the two methods provides researchers with more reliable structural data.
更多查看译文
关键词
Reflection,Structural Data,Total Reflection,Facet Surface,Vertical Coupling
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要