Evaluation of impurity content by Hall effect analysis in CdS

Carrier concentration and Hall mobility have been analyzed for defect-introduced CdS in the temperature range from 10 to 300 K. Defects were introduced by 10 MeV electron irradiation into undoped CdS in which impurity conduction appears. An iterative method was used for the Hall mobility analysis. The overall agreement between the carrier concentration and Hall mobility analyses has been excellent. The following results are obtained: (1) Impurity conduction appears in CdS containing concentrations as low as 2.8×1015 donors/cm3 and 1×1014 acceptors/cm3. (2) The piezoelectric constants are 0.207±0.005 and 0.152±0.005 for the directions parallel and perpendicular to the c-axis, respectively. (3) Irradiation with 10 MeV electrons introduces mainly acceptor-type defects and suppresses impurity conduction. (4) The acoustic phonon deformation potential increases with irradiation. (5) Donor ionization energy changes with acceptor concentration as ED=33−3.9×10-5N1/3A meV.