Layout Dependence Modeling for 45-nm CMOS With Stress-Enhanced Technique
IEEE Transactions on Electron Devices(2009)
摘要
Layout dependences for stress-enhanced MOSFETs including contact positioning, the second neighboring poly effect, and bent diffusion are modeled in 45-nm CMOS logic technology. It is found that the sensitivity of contact position in the channel direction is larger for PMOS with a higher stress liner than for NMOS. The effect of contact positions is modeled by using the distance of contact to gate ...
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关键词
Logic gates,Stress,SPICE,Layout,Silicon germanium,MOSFETs
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