A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface.
ISSCC（2012）
关键词
NAND circuits,flash memories,integrated circuit reliability,NAND flash memory,USB devices,bit cost,camcorders,cell phones,die micrograph,digital cameras,flash markets,flash-memory-die densities,market demands,memory size 64 GByte,multilevel flash memory,size 19 nm,solid-state drives,toggle mode interface,voltage 1.8 V,
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