Room temperature luminescence in CuI/AgI quantum dots

Journal of Luminescence(2008)

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摘要
Room temperature luminescence in a CuI/AgI glass system is investigated by irradiating the system at 410nm (3.02eV). The spectrum peaks at 635nm (1.95eV) and 700nm (1.77eV), while the intensity is significantly enhanced (centered at 635nm) by increasing the amount of AgI. We propose a model based on an increase in the AgI:Cu+ species at higher AgI concentration at which the red emission is attributed to the radiative recombination from carriers trapped at the donor sites (e.g., interstitial silver ions) and the acceptor sites (e.g., a vacancy-compensated divalent cation). The PL efficiency is also estimated by comparison with a standard rhodamine B solution.
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关键词
CuI/AgI quantum dots,AgI:Cu+ nanocrystals,Holes trapped in vacancy-compensated metal ions
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