Growth Of High Resistance Thick Gan Templates By Hvpe

We report on the growth of superior quality highly resistive thick GaN films by hydride vapor phase epitaxy (HVPE). HVPE growth conditions resulting in high quality crack-free films with sheet resistances in the range of 3.5x10(5) Ohm/sq are described. Thick films are grown using a vertical HVPE reactor with a unique gas flow delivery system. High quality 1 micron thick GaN layers grown by MOCVD on c-plane sapphire substrates are used as templates. The films are characterized by Hall effect measurements, photo-luminescence, the light-induced transient grating technique, X-ray diffractometry, and scanning electron microscopy. (c) 2005 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.