A Gaas Double-Balanced Dual-Gate Fet Mixer Ic For Uhf Receiver Front-End Applications

K Kanazawa,M Kazumura, S Nambu, G Kano,I Teramoto

IEEE Transactions on Electron Devices（1985）

引用 34|浏览3

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摘要

A double-balanced dual-gate FET mixer has been developed for application in the front-end circuit of UHF receivers. A 6-8-dB conversion gain has been obtained without an additional matching circuit over a wide frequency range from 100-800 MHz with good suppression of RF/LO feedthrough by more than 20 dB and third-order intermodulatian product of -60 dB.

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关键词

front end,gallium arsenide,application specific integrated circuits,impedance,gain,radio frequency,voltage

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