Ensemble Monte Carlo study of interface-state generation in low-voltage scaled silicon MOS devices

An ensemble Monte Carlo (MC) model coupled with an interface-state generation model was employed to predict the quantity and lateral distribution of hot-electron-induced interface states in scaled silicon MOSFETs. Constant field and more generalized scaling methods were used as the basis to simulate devices with 0.33-, 0.20-, and 0.12-/spl mu/m channel lengths. The dependencies of interface-state ...