Plasma Damage-Enhanced Negative Bias Temperature Instability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors

C.-Y. Chen,J.-W. Lee,W.-C. Chen,H.-Y. Lin,K.-L. Yeh,P.-H. Lee,S.-D. Wang,T.-F. Lei

IEEE Electron Device Letters（2006）

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摘要

In this letter, a mechanism that will make negative bias temperature instability (NBTI) be accelerated by plasma damage in low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) is presented. The experimental results confirm that the mechanism, traditionally found in the thin gate-oxide devices, does exist also in LTPS TFTs. That is, when performing the NBTI measurement, the LTP...

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关键词

Plasma temperature,Negative bias temperature instability,Silicon,Thin film transistors,Niobium compounds,Titanium compounds,Plasma devices,Plasma measurements,Plasma accelerators,Acceleration

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