Assessment of neutron- and proton-induced nuclear interaction and ionization models in Geant4 for Simulating single event effects

This paper examines the performance of the Geant4 radiation transport toolkit for the simulation of energy deposition from proton- and neutron-nuclear interactions in silicon microelectronics. The results show that for large (/spl sim/300 /spl mu/m) to small (/spl sim/0.5 /spl mu/m) feature-size devices, the nucleon-nuclear and electromagnetic interaction models within the toolkit provide energy d...