Sensitivity of a modulated optical reflectance probe to process-induced lattice disorder

Process induced lattice disorder in Si(100) wafers via a Si-28+ ion beam has been characterised using Rutherford backscattering spectroscopy (RBS) and modulated optical reflectance (MOR). An exact correlation between the measured photoreflectance amplitude response and displaced silicon atom density is obtained. A theoretical calculation of the sensitivity of the technique to lattice disorder is presented.