AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applications

In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with sub-10 nm AlInN barrier were grown with very low Ga background level (<1%). The low R-sh of 215 Omega/sq was obtained with an excellent standard deviation of 1.1% across 3 " wafers. Lehighton RT contactless Hall tests show a high mobility of 1617 cm(2)/Vs and sheet charge density of 1.76 x 10(13)/cm(2). DC characteristics of an AlInN/GaN HEMT with a gate length of 0.1 mu m and 25 nm Al2O3 passivation show maximum drain current (I-DS,I-max) of 2.36 A/mm at V-GS = 2 V. Gate recessed devices with 0.15 mu m gate length and 25 nm Al2O3 passivation resulted in maximum transconductance (g(m)) of 675 mS/mm, the highest value ever reported in AlInN transistors. Excellent frequency response was obtained. The maximum f(T) is 86 GHz and f(max) is 91.7 GHz. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim