Band structure of femtosecond-laser-pulse excited GaAs

A major contribution to the change in the band structure of highly excited GaAs is shown to be electronic in origin and due to the change in the screened pseudopotential and exchange-correlation effects. For 10% electron excitation, the fundamental gap, which becomes indirect as in GaP, vanishes, and the bonding-antibonding gap at X is reduced by almost one half.