Eliminating Back-Gate Bias Effects in a Novel SOI High-Voltage Device Structure

Xiaorong Luo,Daping Fu,Lei Lei,Bo Zhang,Zhaoji Li,Shengdong Hu,Zhengyuan Zhang,Zhicheng Feng,Bin Yan

IEEE Transactions on Electron Devices（2009）

引用 8|浏览13

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摘要

A novel silicon-on-insulator (SOI) high-voltage device structure and its eliminating back-gate bias effects are presented. The structure is characterized by a compound buried layer (CBL) made of two oxide layers and a polysilicon layer between them. At the high-voltage blocking state, holes collected on the polysilicon bottom interface shield the SOI layer and the upper buried oxide (UBO) layer fr...

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关键词

Electric breakdown,Silicon on insulator technology,Silicon,Electric potential,Data mining,Probability density function,Substrates

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