Improved Ion Beam Incident Angle Control For Varian E220 And E500 Implanters

ION IMPLANTATION TECHNOLOGY(2006)

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摘要
This paper discusses the need and a solution for improved implant angle control required to support advanced device production at 90nm on Varian E220/E500 series ion implanters. The paper characterizes the software and hardware improvements made to the implanter in order to achieve improved control over implant angle. In-situ Therma-wave metrology checks along with split-lot test methodology and device electrical performance results are also characterized.
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关键词
ion implantation, angle control, semiconductors
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