Regrowth of Amorphous Layers in Silicon-On-Insulator Structures Formed by the Implantation of Oxygen
Electronics letters（1983）
Abstract
Synthesised silicon-on-insulator structures have been formed and implanted with 1×1016 As+ cm-2 at 40 keV. The regrowth kinetics of the amorphised layer, which also contains lattice defects and excess oxygen, has been studied by Rutherford backscattering. The regrowth of the layer occurs at a mean rate of 13 Å min¯1 at 500°C with an activation energy of 2.7±0.2 eV. This experiment further demonstr...
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Key words
amorphous semiconductors,arsenic,elemental semiconductors,ion implantation,particle backscattering,semiconductor doping,semiconductor growth,semiconductor-insulator boundaries,silicon,silicon compounds
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