Interface morphology in chemical vapour deposition on profiled substrates

A method for calculating interface development during vapour deposition on profiled substrates is presented. Calculation is accomplished by applying the results of a first order perturbation calculus of the mass transport system to the Fourier components of the original profiled substrate shape. Subsequent synthesis yields the new substrate shape. The combined effect of interface geometry and experimental conditions on the morphology is discussed with reference to some examples. Three growth habits which can be distinguished theoretically, were observed experimentally.