Observation of Sputtered Si Surface Irradiated with Metal Cluster Complex Ions

We report the results of surface sputtering of Si using a proto type ion source to utilize a compact cluster ion source which was developed using Os-3(CO)(12) as a low-damage sputtering source. The surface roughening of Si sputtered with cluster ions with an acceleration energy of 10 keV at incidence angles between 0 and 60 degrees was investigated. The sputtered Si surface was observed using an atomic force microscope and a scanning electron microscope. At incident angles between 0 and 45 degrees, the surface remained smooth while at 60 degrees, roughening was observed.