10-Gb/s, 80-km SMF Transmission From 0 to 80 C by Using L-Band InGaAlAs-MQW Electroabsorption Modulated Laser With Twin Waveguide Structure
Lightwave Technology, Journal of（2009）
摘要
A 10-Gbit/s, 1.58-mu m, InGaAlAs electroabsorption modulator (EAM) integrated distributed-feedback (DFB) laser (EML) with a twin waveguide (TWG) structure is operated experimentally over a wide temperature range of 0 to 80degC. We introduce an InGaAlAs multi-quantum well (MQW) system for both LD and EAM MQWs, because this material has temperature-tolerant characteristics. These layers are grown using single step epitaxial growth, and the device was fabricated with a very simple process. Moreover, successful transmission through an 80-km single-mode fiber (SMF) was achieved with the device running at up to 80degC. These results confirm the suitability of this type of laser for use as a cost-effective and low-power consumption light source in 10-Gbit/s optical network systems.
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关键词
III-V semiconductors,aluminium compounds,distributed feedback lasers,electro-optical modulation,electroabsorption,gallium arsenide,gallium compounds,indium compounds,optical fibre networks,optical waveguides,quantum well lasers,semiconductor quantum wells,InGaAlAs,L-band MQW electroabsorption modulator,bit rate 10 Gbit/s,distance 80 km,distributed-feedback laser,low-power consumption light source,multiquantum well system,optical network systems,single step epitaxial growth,single-mode fiber transmission,temperature 0 degC to 80 degC,twin waveguide structure,wavelength 1.58 mum,Distributed feedback laser,InGaAlAs,electroabsorption modulator,twin waveguide structure,uncooled operation
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