P-Type Doping In Gan Through Be Implantation

Z. C. Feng,Y. J. Sun,L. S. Tan,S. J. Chua,J. W. Yu,C. C. Yang,W. Lu,W. E. Collins

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7（2005）

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摘要

P-type doping through Be implantation in GaN is achieved by a two-step annealing process. Combined photoluminescence-Raman measurements showed Be-related band, indicating a low acceptor ionization energy of 140 meV, and resonance Raman features. X-ray diffraction revealed the lattice expansion due to Be-implantation. Scanning electron microscopy exhibited the surface defects morphology with hexagonal plane like inverse open pyramids. The effect of new annealing process on Be activation is discussed.

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关键词

x ray diffraction,scanning electron microscopy

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