Tantalum oxide capacitors for GaAs monolithic integrated circuits

M. E. Elta,A. Chu,L. J. Mahoney, R. T. Cerretani,W. E. Courtney

IEEE Electron Device Letters（1982）

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摘要

The performance of a high-yield tantalum oxide capacitor for use in GaAs monolithic microwave integrated circuits is described. The integral metal-insulator-metal sandwich structure is reactively sputter-deposited at low temperatures, compatible with a photoresist lift-off process, on semi-insulating GaAs substrate. Dielectric constants of 20-25 were achieved in the capacitors fabricated. An initi...

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关键词

Gallium arsenide,Monolithic integrated circuits,MIM capacitors,Microwave integrated circuits,MMICs,Metal-insulator structures,Sandwich structures,Temperature,Resists,Dielectric substrates

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