Semi-insulating polysilicon heterojunctions on silicon

The electrical characteristics of undoped semi-insulating polysilicon (SIPOS)/p-type crystalline silicon (p-Si) and N+-SIPOS/p-Si heterojunctions were investigated. The current-voltage characteristics of the undoped SIPOS/p-Si heterojunctions depart from a hyperbolic sine behavior as the refractive index of the SIPOS increases. Carrier conduction in the undoped heterojunctions is characterized by low- and high-temperature barrier heights, which also vary with refractive index. Current-voltage characteristics of the n+-SIPOS/p-Si structures were rectifying with a cut-in voltage of about 1 V, which decreased with increasing temperature. Increasing the SIPOS doping increased the current density for a given bias and reduced the cut-in voltage. The forward characteristic displayed both a low and a high field activation energy with the difference attributable to the presence of interface states at the junction. Consequently, carrier conduction in these doped and undoped SIPOS/p-Si heterojunctions appears to be controlled by the SIPOS/p-Si interface. However, hydrogen annealing passivates the interface states thereby altering the low field conduction region.