Modelling of charging effects caused by anodic bonding in packaged MOS devices

K. Schjølberg-Henriksen,T. A. Fjeldly,Santander, J.,J. A. Plaza,A. Hanneborg

Electronics Letters（2002）

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摘要

The electrical effects of anodic bonding on the gate oxide of packaged MOS devices are presented, and shown to be dependent both on the gate oxide fabrication process and on the design of the glass cavity. Methods to incorporate these effects in the device models to ensure reliable circuit simulations for the wafer-level packaged devices are proposed.

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关键词

MIS devices,MOS capacitors,MOSFET,dielectric thin films,interface states,leakage currents,semiconductor device models,semiconductor device packaging,semiconductor-insulator boundaries,surface charging,CMOS capacitors,anodic bonding,charging effects modelling,device models,electrical effects,gate oxide fabrication process,glass cavity design,packaged MOS devices,reliable circuit simulations,wafer-level packaged devices

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