Interaction of divacancies with Ge atoms in Si1−xGex

It has been shown that during irradiation, the V-2 and V2Ge centers are formed and the absorption band that peaked at about 5560 cm(-1) in as-irradiated Si1-xGex samples is the superposition of two bands corresponding to the absorption by the V-2(0) and V2Ge centers. The contribution of the V-2* component to the absorption band in as-irradiated samples increases as the germanium content increases. A thermostability of the V2Ge centers is shown to be essentially higher than the one of the divacancy in silicon and increases with the germanium content. (C) 2001 Elsevier Science B.V. All rights reserved.