A Broadband Stacked Power Amplifier in 45-nm CMOS SOI Technology.

IEEE Journal of Solid-State Circuits(2013)

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摘要
A fully integrated broadband power amplifier (PA) is implemented in a standard 45-nm CMOS SOI technology. The PA is designed using a dynamically biased stacked SOI transistor approach, which constructively adds drain-source voltage signals of individual transistors while keeping their gate voltages within source and drain voltage limits. The design overcomes both low gate-oxide breakdown and low s...
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关键词
Transistors,Impedance,CMOS integrated circuits,Power generation,Logic gates,Electric breakdown,Broadband communication
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