Growth Of Ain Films And Their Characterization

Single crystal AIN layers have been produced by migration enhanced metal organic chemical vapor deposition (MEMOCVD), hydride vapor phase epitaxy (HVPE) and their combination. The growth was carried out on 2" basal plane sapphire substrates. In MEMOCVD, the duration and waveforms of precursors were varied to achieve better surface mobility and thus better atomic incorporation. It resulted in superior layer quality templates with the narrowest (002) X-ray rocking curve full width half maximum (FWHM). Such high quality AIN templates were used as seeds for subsequent HVPE growth. Thick films with thickness ranging from 1-25 pin have been grown by HVPE with growth rates as high as 200 mu m/min, highest ever reported. Films grown by the two methods have been extensively characterized by Nomarski microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), high-resolution Xray diffractometry (HRXRD), and photoluminescence (PL). (c) 2006 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.