A novel vertical channel self-aligned split-gate flash memory

A novel vertical channel self-aligned split-gate floating-gate flash memory (VSAS_FG) was proposed and experimentally demonstrated for the first time. The floating-gate of VSAS_FG can be self-aligned realized without additional mask. Moreover, the VSAS_FG has higher scalability since the cell area of vertical channel device is independent on gate length. With enhanced electrical fields for programming and erasing, the fabricated VSAS_FG can achieve ∼10μs programming time and ∼10ms erasing time. The cycling endurance and the bake retention were also investigated. The experimental results demonstrate the feasibility of the VSAS_FG concept as a promising candidate for low-power, high-density flash memory application.