On equilibration processes in GD amorphous silicon, prepared at high substrate temperatures

Amorphous silicon with a low deep defect density and a sharp Urbach slope E(o) has been grown in the whole 200-550-degrees-C range. Under "optimal growth conditions", even at substrate temperatures around 500-degrees-C, E(o) can be as low as E(0) = kT(eq), where T(eq) is an equilibration temperature (almost-equal-to 200-degrees-C). Higher growth temperatures (T > 340-degrees-C) are suggested for improvement of light stability of amorphous silicon.