Preparation of hydrogenated amorphous silicon tin alloys
REVUE DE PHYSIQUE APPLIQUEE(1987)
摘要
This paper describes a new method to obtain hydrogenated amorphous semiconductor alloys. The method is reactive co-evaporation. Silicon tin hydrogenated alloys are prepared under atomic hydrogen atmosphere. We discuss the influence of various parameters of preparation (hydrogen pressure, tungsten tube temperature, substrate temperature, annealing...) on electrical properties of samples.
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关键词
annealing,hydrogen
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