HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide

C. H. Wu,B. F. Hung,A. Chin, S. J. Wang,F. Y. Yen,Y. T. Hou,Y. Jin,H. J. Tao, S. C. Chen,M. S. Liang, Chin, Albert

Electron Device Letters, IEEE（2006）

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摘要

The authors have fabricated low-temperature fully silicided YbSi2-x-gated n-MOSFETs that used an HfAlON gate dielectric with a 1.7-nm EOT. After a 600 °C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm2/V·s. They have additional merit of a process compatible with current very large scale integration fabrication lines.

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关键词

MOSFET,VLSI,cryogenic electronics,hafnium compounds,rapid thermal annealing,ytterbium compounds,1.7 nm,4.1 eV,600 C,HfAlON,MOSFET,YbSi,electron mobility,rapid thermal annealing,very large scale integration fabrication,HfAlON,MOSFET,YbSi

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