Luminescence and ultrafast phenomena in InGaN multiple quantum wells

High quality In 0.13 Ga 0.87 N/GaN multiple quantum wells (MQWs) on (0001) sapphire substrate were fabricated by MOCVD method. The quantum well thickness is as thin as 10 Å, and the barrier thickness is 50 Å. We have investigated these ultrathin MQWs by continuous wave (cw) and time-resolved spectroscopy in the picosecond time scales in a...More