New-type silicon bipolar-pixel detector with internal amplification

New-type silicon detector of charged particles and photons with internal amplification is considered. Bipolar n + p n − -transistor pixel placed on a high-purity n − -type silicon substrate is the functional element of the detector. The range being sensitive to ionization is a low-doped ( N ∼ 10 12 cm − 3 ) n − region of the collector with a thickness virtually coinciding with the substrate thickness. A thin base containing one or more n + emitters is formed on the surface. The current-amplification gain factor of the emitterbase junction is about 30. Detector prototypes are manufactured in the form of transistor matrices of 3 × 3   mm 2 and 6 × 6   mm 2 dimensions with a interpixel spacing of 50 and 100 microns. Results of testing of matrices are presented. The work is supported by the International Science and Technology Center, Project # 3024.