A holistic analysis of circuit timing variations in 3D-ICs with thermal and TSV-induced stress considerations
Computer-Aided Design（2012）
摘要
In 3D ICs, TSV-induced thermal residual stress impacts transistor mobilities due to the piezoresistive effect. This phenomenon is coupled with other temperature effects on transistor parameters that are seen even in the absence of TSVs. In this paper, analytical models are developed to holistically represent the effect of thermally-induced variations on circuit timing. The analysis is based on a semianalytic formulation that is demonstrated to accurately capture the biaxial nature of TSV stress and its effect on delay.
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关键词
analytical model,circuit timing variation,holistic analysis,temperature effect,biaxial nature,tsv-induced thermal residual stress,transistor mobilities,semianalytic formulation,tsv-induced stress consideration,tsv stress,transistor parameter,circuit timing,piezoresistive effect,stress,static timing analysis,3d ic,through silicon via,transistors,silicon,finite element method
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