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External Cavity Tunable Type-I Diode Laser with Continuous-Wave Singlemode Operation at 3.24 [micro Sign]m

Electronics letters(2010)

Cited 11|Views9
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Abstract
A tunable external cavity laser (ECL) near 3.24 mu m was developed using semiconductor laser gain chips based on GaSb. The type-1 interband laser diodes were grown by molecular beam epitaxy using 17 nm InGaAsSb compressively-strained quantum wells with 30 nm AlInGaAsSb quinary barriers for improved hole confinement. In continuous-wave operation with a diode temperature of 10 degrees C, the ECLs produce up to 1.8 mW of singlemode output power with a tuning range of 60 nm. The devices are tunable through the fundamental nu(3) vibrational absorption features of methane gas, providing a platform for highly-sensitive detection of trace hydrocarbons.
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Key words
aluminium compounds,indium compounds,laser cavity resonators,laser modes,laser tuning,molecular beam epitaxial growth,quantum well lasers,semiconductor quantum wells
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