Broadband Millimeter-Wave LNAs (47–77 GHz and 70–140 GHz) Using a T-Type Matching Topology
J. Solid-State Circuits（2013）
摘要
This paper presents the design and characterization of two broadband millimeter-wave LNAs realized in 0.25- μm and 0.13- μm SiGe BiCMOS technologies. Both circuits adopt a T-type matching topology to achieve the wide bandwidth (47-77 GHz for the V-band LNA and 70-140 GHz for the W/F-band LNA). The measured maximum gain is about 23 dB for both LNAs. The measured noise figure (NF) is below 7.2 dB (from 50 to 75 GHz) for the V-band LNA and below 7 dB (from 78 to 110 GHz) for the W/F-band LNA. Both LNAs are differential circuits and consume 52/54 mW dc power. To the best of the authors' knowledge, both LNAs achieve the widest bandwidth in corresponding frequency bands with very competitive gain and NF.
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关键词
broadband,nf,bicmos technologies,sige,low noise amplifiers,bicmos analogue integrated circuits,frequency 47 ghz to 77 ghz,broadband millimeter-wave lna,noise figure,differential circuits,bicmos,power 54 mw,differential amplifiers,low-noise amplifiers,wideband amplifiers,w-f-band lna,t-type matching topology,low-noise amplifiers (lnas),ge-si alloys,millimeter-wave integrated circuits,v-band lna,size 0.13 mum,frequency 70 ghz to 140 ghz,millimetre wave amplifiers,millimetre wave integrated circuits,size 0.25 mum,power 52 mw
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