Low-Defect 3C-SiC Grown on Undulant-Si (001) Substrates

Attempts to grow mono-crystalline cubic silicon carbide (3C-SiC) have been made using vapor phase hetero-epitaxial growth with Si [1], TiC [2], and sapphire [3] as substrates, and with bulk growth using the sublimation method. In 1983, Nishino et al. reported hetero-epitaxial growth of 3C-SiC on a carbonized Si(001) surface [5]. Since then, 3C-SiC heteroepitaxy on Si substrate using the CVD or MBE methods has been studied intensively, because it has been proved that using Si as a substrate facilitates the upsizing of SiC, while reducing manufacturing costs, and that carbonization of the Si surface significantly improves the reproducibility of the 3C-SiC grown on it.