Effects of Oxidants on the Deposition and Dielectric Properties of the Srtio3 Thin Films Prepared by Liquid Source Metal-Organic Chemical Vapor Deposition (Mocvd)

SrTiO3 thin films are deposited by a liquid source metal-organic chemical vapor deposition (MOCVD). The effects of oxidants on the deposition characteristics and dielectric properties of the films are mainly tested, O-2, N2O and O-2 + N2O gases are used as the oxidants and the films with Ti-rich and Sr-rich compositions are obtained when O-2 and N2O is used, respectively. Deposition of thin initial layer under O-2 atmosphere is very effective to obtain large dielectric constant of the SrTiO3 thin film when the main layer is deposited under O-2 + N2O atmosphere. The dielectric constants of 40 nm thick SrTiO3 films with thin O-2, N2O initial layers and without the initial layers are 235, 145 and 210, respectively.