Measurement of the Delamination of Thin Silicon and Silicon Carbide Layers by the Multi-Wavelength Laser Ellipsometer

The refractive index and thickness of a triple layer are measured using a multi-wavelength laser ellipsometer, where three different wavelengths around 750 nm were employed. This measurement gives the refractive ie indexes and thicknesses of the delaminated Si layer and the air gap. The thickness of the delaminated Si layer and air gap are 774 nm and 60 nm, respectively, in the H+ implanted Si layer with annealing at 600 degrees C. The delamination of the 619-nm-thick SiC layer can also be observed by this measurement in 6H SiC, where H+ is implanted at 100 keV with 1 x 10(17) ions/cm(2) and annealing is performed at 800 degrees C for 10 min. This nondestructive ellipsometric measurement is useful for the delamination study of Si and SiC layers.