Study Of The Optimal Film Structure By Using Conventional Ellipsometry

The optimal film structure affected by the space effect has been studied for SiO2 film samples deposited onto Si wafers by using the e-beam evaporation method. The ellipsometric data were measured at different incidence angles and in the 300-800-nm wavelength range. In the range where the phase delay delta is close to pi, the film thickness deduced from the conventional ellipsometry model varied with the phase delay. The optimal SiO2 film-thickness was achieved with a modified ellipsometric model, including the space effect. The results given in this work can generally be applied to other optical measurement methods used to study film structures.