Dependence of lifetime on design parameters of an nipi doping superlattice: Results of self-consistent calculations

This paper presents a scheme for calculating recombination lifetimes in a doping superlattice at arbitrary temperatures and forward biases. The scheme involves the self-consistent calculation of sub-band energies, populations and envelope functions, followed by the calculation of lifetime using overlap integrals. Results of these calculations are then presented for a variety of combinations of layer thicknesses and dopings, all at a temperature of 300 K and a forward bias of 1 V. Our results give room temperature lifetimes as high as ∼30 ms for n and p layer thicknesses of 750 Å each, i-layer thickness of 50 Å, and dopings in the n and p layers of 2×10 18 cm −3 .