A 3.9-/spl mu/m pixel pitch VGA format 10-b digital output CMOS image sensor with 1.5 transistor/pixel

H. Takahashi,M. Kinoshita,K. Morita,T. Shirai,T. Sato,T. Kimura,H. Yuzurihara,S. Inoue,S. Matsumoto

IEEE Journal of Solid-State Circuits（2004）

引用 57|浏览11

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摘要

A 3.9-/spl mu/m pixel pitch VGA format 10-b digital output CMOS image sensor with 1.5 transistor/pixel has been developed for mobile applications. The newly developed CMOS pixel architecture realizes the minimum number of the transistors in one pixel. Small pixel size and sufficient fill factor are achieved by using the shared pixel architecture and floating diffusion driving. High conversion gain...

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关键词

Pixel,CMOS image sensors,Image sensors,Circuit noise,Dark current,Image converters,Photodiodes,Charge transfer,Image sampling,CMOS process

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