Characterization of Czochralski Si crystals by HVEM

Based on in-situ observations of electron-irradiation-induced secondary defects of various Czochralski-grown silicon crystals (Cz-Si) above room temperature with an ultrahigh-voltage electron microscope, a new tool for characterization of Cz-Si is proposed. It has been shown that the nucleation of the defects is associated with clusters of oxygen, which is an unavoidable impurity of Cz-Si, and also other impurities impinged from the electron beam incident surface. Characteristic features of sequences of the defect formation. growth and shrinkage with irradiation are also discussed on the basis of the reaction rate theory.