Spatially and energetically resolved optical mapping of self-aligned InAs quantum dots

SEMICONDUCTOR SCIENCE AND TECHNOLOGY(2008)

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摘要
We perform photoluminescence measurements on self-assembled InAs quantum dots which are self-aligned by a deliberately induced underlying misfit dislocation network. Scanning micro photoluminescence measurements allow for a spatial mapping of the structures and reveal different emission energies for quantum dots aligned along [110] and [-110] crystal directions.
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关键词
quantum dot,optical mapping,dislocations
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