An improved VBIC model for InP DHBTs

Yuxia Shi,Zhi Jin,Yongbo Su,Yuxiong Cao,Yan, Wang

Radio Frequency Integrated Circuits Symposium（2012）

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摘要

An emprical model is established for InP/InGaAs DHBTs based on the VBIC model. The heterojunction barrier and current blocking effect are considered in the current expressions. And new empirical models for transit time and collector capacitance are proposed by considering the voltage and current dependence. The excellent fitting results show that the improved model has better accuracy than the conventional VBIC model.

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关键词

semiconductor device models,indium compounds,emprical model,inp-ingaas,current blocking effect,heterojunction barrier,inp/ingaas dhbt,improved vbic model,gallium arsenide,transit time,vbic model,heterojunction bipolar transistors,empirical model,heterojunction effect,dhbt,collector capacitance,heterojunctions,mathematical model

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