Experimental research on temperature dynamics of SiC JFET
IPEMC), 2012 7th International（2012）
摘要
In this paper, junction temperature behavior of Silicon Carbide (SiC) JFET is investigated both in room temperature and high ambient temperature. The mechanism of thermal runaway of commercially available SiC JFET device is analyzed. The experimental results reveal reduced risk of thermal runaway under high ambient temperature for SiC JFET devices.
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关键词
temperature dynamic,jfet,silicon carbide,junction temperature,thermal resistance,temperature,temperature measurement
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