Fabrication and characterization of a Pi-gate ultrathin body junctionless poly-Si TFTs

JiaJiun Wu,Hungbin Chen,Minghung Han,Yungchun Wu,Chunyen Chang

Silicon Nanoelectronics Workshop（2012）

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摘要

A novel method of fabricate ultrathin body (UTB) junctionless TFTs (JLTFT) with sub-10nm poly-Si channel has been successfully demonstrated. It is no additional mask for lithography. The cost of fabrication flow can be reduced by a novel method, that demonstrate at this work. UTB JLTFT has low threshold voltage and steep subthreshold slop 160 mV/dec at W/L=0.7um/1um. An ON/OFF current ratio is about 106, and transconductance does not decrease rapidly at a high drain voltage.

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关键词

high drain voltage,on-off current ratio,utb jltft,steep subthreshold slop,silicon,pi-gate ultrathin body junctionless poly-si tft,threshold voltage,fabrication flow,si,elemental semiconductors,transconductance,thin film transistors,oxidation,fabrication,controllability,logic gates,temperature measurement

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