A novel recessed-channel tu nneling FET design with boosted drive current and suppressed leakage current

Wei Wang,SongGan Zang,Xi Lin,Xiaoyong Liu,Qingqing Sun,Pengfei Wang, Davidwei Zhang

Solid-State and Integrated Circuit Technology（2012）

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摘要

In this paper, we propose a recessed-channel (U-shape-channel) tunneling field-effect-transistor (TFET) for 16-nm technology applications. This new device structure has the advantages of boosted Ion and suppressed Ioff compared to the planar bulk-Si TFETs. Using Sentaurus TCAD simulations, it is found that the recessed channel will enlarge the tunneling area which will greatly enhance the drive current. Meanwhile, a steeper subthreshold swing (SS) will be realized in the U-shape TFET.

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关键词

planar bulk-silicon tfet,suppressed leakage current,recessed-channel tunneling field-effect-transistor,leakage currents,tunneling area,boosted drive current,tunnel transistors,technology cad (electronics),size 16 nm,silicon,u-shaped channel tfet,field effect transistors,si,recessed-channel tunneling fet design,recessed channel,steeper subthreshold swing,elemental semiconductors,tunnelling,sentaurus tcad simulations,circuit simulation

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